| PART |
Description |
Maker |
| KM23C32101C |
32M-Bit (4Mx8) CMOS MASK ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32120C |
32M-Bit (4Mx8) CMOS Mask ROM(32M(4Mx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT49BV3218-90TI AT49BV3218-90CI AT49BV3218T-11CI A |
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Wakefield Thermal Solutions, Inc.
|
| KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16）的CMOS掩模ROM2兆位Mx8 / 2Mx16）的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| KM23C32000CG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K7R323684MK7R321884MK7R320884M |
1Mx36 & 2Mx18 & 4Mx8 QDRII b4 SRAM Data Sheet
|
Samsung Electronic
|
| KM23C32000C |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7R323682MK7R321882MK7R320882M |
1Mx36-bit, 2Mx18-bit, 4Mx8-bit QDRII b2 SRAM Data Sheet
|
Samsung Electronic
|
| A82DL3234 A82DL3244 A82DL3224UG-70 A82DL3224TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAMA82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL32x4T（ü）32兆位4Mx8 Bit/2Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
